Photoresponse characteristics of MoS2 QDs/Si nanocone heterojunctions utilizing geometry controlled light trapping mechanism in black Si

Abstract

A unique light trapping mechanism associated with nano-conical textured black Si templates has been utilized to achieve improved photoresponse in MoS2QDs/Si heterojunctions over a wide wavelength range from visible to near infrared. Black Si templates have been fabricated by a simple and cost effective metal assisted chemical etching technique followed by spin-coating of colloidal MoS2 quantum dots (QDs) to form the heterojunction. A peak responsivity of as high as ∼1.39 A W−1 at ∼665 nm for a bias of 5 V has been achieved. The responsivity value is higher as compared to recently published results having similar device structure. The combination of MoS2 QDs and black Si has resulted in a broader spectral response with enhanced optical absorption in the nano-conical heterojunction devices. Finite element based optical simulation results revealed the superiority of MoS2 QDs/Si nano-conical heterojunctions due to improved light trapping. The results appear attractive for next generation Si CMOS compatible broad band photodetectors using two dimensional semiconductors.