Abstract
Photoelectric and electroluminescent properties of silicon-〈porous silicon〉 structures with chemically deposited metal contacts were investigated. The large specific surface area of the contact and selective metal deposition only on the macrocrystalline elements of the structure provide better photoelectric performance of the photodiodes compared to the structures with evaporated contacts, especially in the short-wavelength spectral range. The obtained electroluminescence spectra are explained by metal-silicon barrier properties under forward bias and by double carrier injection into nanocrystallites under reverse bias.
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