Abstract
Zinc oxide semiconductor is a promising material for various optoelectronic applications such as visible light and UV detectors. The photoresponse and electrical characterization of the photodiode based nanofibers n-ZnO and p-Si semiconductors have been investigated. The Al/p-Si/n-ZnO/Al diode shows a clear rectifying behavior with a rectification ratio of 2.90×10 4 at ±4 V. The diode exhibits a photoconducting behavior with a ratio I on/ off of 60. The photoconducting mechanism of the diode is controlled by the presence of exponential distribution of impurity levels in the forbidden band of ZnO. The obtained results indicate that the Al/p-Si/n-ZnO/Al diode can be used as photodiode in optoelectronic applications.
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