Abstract
The review analyzes the development of domestic technology for manufacturing highly sensitive and stable photoresistors from solid solutions of the CdxHg1-xTe tri-ple system since the 70s of the last century. The volt sensitivity of modern photoresistors made of heteroepitaxial structures n–CdxHg1-xTe, obtained by molecu-lar beam epitaxyon a gallium arsenide substrate, in the spectral range of 8–12 mi-crons with a photosensitive pixelsize of 5050 microns, operating under nonequilibriumcon-ditions of the exclusion of minority charge carriers, reaches a value of Suλmax107V/W with a specific detection capacity D*λmax (1200.1,14o) of more than51011cmGz1/2W-1at liquid nitrogen temperature. The high voltage sensi-tivity and low power output (510-7W) of photoresistors in the design of a with a radialarrangement of contactsallow you to create focal matrices based on them with a number of pixels of106.
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