Abstract
Abstract In this work we discuss a method of preparation of a highly sensitive light detector based on ZnO nanorods. A photoresistor constructed by us is based on a heterojunction between high quality ZnO nanorods and high resistivity p-type Si used as a substrate for nanorods’ deposition. ZnO nanorods are grown by a modified version of a microwave assisted hydrothermal method which allows for growth of high quality ZnO nanorods in a few minutes. The obtained photoresistor responds to a wide spectral range of light starting from near infrared (IR) to ultraviolet (UV). Properties of the detector are evaluated. We propose the use of the detector as an optical switch.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.