Abstract
A novel method to remove photoresist using low molecular weight alcohols (e.g., isopropanol) is described. This process produces a dry surface in a single step; no additional rinsing or drying is required. Results of atomic force microscopy (AFM) analysis show no appreciable change in microroughness of aluminum, silicon, or silicon dioxide surfaces upon alcohol treatment. X‐ray photoelectron spectroscopy (XPS) of post isopropanol‐treated surfaces indicates that organic contamination levels as measured by XPS are similar to those resulting from RCA cleans. Low dose ion implanted photoresist can be removed at room temperature (27°C). Pressures in the range of 60 to 100 psi and temperatures between 50 and 100°C are required to remove photoresist implanted with . The likely photoresist removal mechanism appears to be dissolution of the polymer matrix by the alcohols. Contact angle measurements suggest that the photoresist has been removed, although a residual adhesive layer applied prior to photoresist spin coating may remain on the surface. © 2000 The Electrochemical Society. All rights reserved.
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