Abstract

The epoxy resin-based photoresist is fabricated by mixing of resin (polymer), sodium acetate trihydrate and ethanol in mass variation using heated magnetic stirrer at 100 rpm speed and temperature of 75 °C. Sodium acetate trihydrate and ethanol each play role as photoactive compound (PAC) and solvent, respectively. Photoresist thin films were grown through spin coating method in voltage 5 V during the 60 s and heating temperature of 150 °C for 15 min. To determine photoresist sensitivity, ultraviolet and X-ray were exposed on the photoresist surfaces. The fabricated photoresist properties are densities of 1 g·mL−1 to 1.23 g·mL−1, dynamic viscosities of 7 Cp to 22 Cp and kinematic viscosities of 7 Cst to 18 Cst. The absorbances of thin films are in the wavelength range of 350 nm to 1050 nm at the maximum absorbances of 0.2 to 0.5 in the wavelength g-line, h-line, and i-line. The generated maximum current achieved (1.84 × 10−8) A. The microstructures of epoxy-based photoresist seem homogeneous. The sensitivities of UV exposures show a photochemistry reaction on photoresist occurred, however for X-ray exposure no reaction found.

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