Abstract
The evolution of integrated circuits into the ultralarge scale integrated regime takes today’s 0.35 μm circuit design rules to even smaller values of 0.18 μm and beyond. As a consequence, photoresist masks are becoming thinner and even more prone to erosion by etching. For this work an I-line novolak resist was used. Etch rates for various process conditions using in situ ellipsometry were obtained. Also the fluorocarbon surface layer, present on top of the photoresist during steady state etching was examined with x-ray photoelectron spectroscopy. The investigated pressure range was 6 to 20 mTorr and the inductive power range was 300 to 1400 W. It was found that there are two distinct regimes of etching behavior. At inductive powers below 600 W the etching is energy flux limited, at higher inductive powers the etching is ion energy limited.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
