Photorefractive two-wave mixing in semiconductors of the 4-bar3m space group in general spatial orientation.

Abstract

The photorefractive two-wave mixing gain coefficient \ensuremath{\Gamma} of GaAs:Cr and InP:Fe, cut with different crystallographic orientations, was determined using a cw Nd:YAG (neodymium doped yttrium aluminum garnet) laser at 1064 nm. The polarization and orientation dependence of the gain coefficient \ensuremath{\Gamma} are calculated from the pertinent interaction matrix elements. Results are discussed with respect to the contactless determination of crystallographic parameters via the photorefractive effect.