Photorefractive multiple quantum well devices approaching diffraction-limited resolution

Abstract

We demonstrate that a resolution approaching their fundamental drift-free diffraction limit can be achieved in photorefractive multiple quantum well (MQW) devices by proper choice of the growth and anneal conditions. Previously reported devices are compared with four MQW samples grown at low temperature and annealed after growth at 620 °C for over 3 h. A simple analytical model with and without lateral drift of photocarriers is used to explain the observed experimental resolutions. The growth temperature and annealing procedure of the low-temperature-grown MQW are shown to significantly influence the device resolution by reducing lateral drift.