Abstract
The results of a theoretical analysis of the photorefractive response in crystals with shallow traps to in a sign-alternating, square-wave electric field are presented. The numerical analysis method developed imposes no restrictions on the frequency of the external field and the period of the photorefractive grating. The parameters characterizing deep donor and shallow trap centers are estimated on the basis of investigations of two-beam interaction in a Bi12SiO20:Cd crystal with the application of a sign-alternating, square-wave electric field.
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