Abstract
PHOTOREFRACTIVE EFFECT IN GaAs AND InP IN THE NANOSECOND REGIMEJ.C. FABRE, J.M.C. JONATHAN and G. ROOSENInstitut d'Optique, Bâtiment 503, Unite Associee au CNRSCentre Universitaire, B.P. 43, 91406 ORSAY Cedex FRANCEAbstractThe photorefractive effect in '3 m crystals shows specific symmetries in its dependenceupon wave polarizations and crystal orientation. We summarize them and use them to studythe energy dependence of the photorefractive two -beam mixing in semi -insulating galliumarsenide and indium phosphide in the nanosecond regime at 1.06 um.IntroductionPhotorefractive materials like BSO and BGO, BaTiO , LiNb03 and KNbO have been widelystudied for applications such as dynamic holography [1], optical memories [2. 31, opticalphase conjugation [4], spatial light modulnto°s [5]or optical interconnections
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