Abstract
The photorefractive diffraction dynamic during writing in paraelectric KTN crystals is studied for the first time to our knowledge. A decay process of the diffraction efficiency during writing after a maximum was reached is observed at a high enough writing intensity. The variation of the time evolution of the diffraction efficiency with the writing intensity and with the external dc electric field is measured. An electron–hole transport model and a nonequilibrium screening model are applied to explain qualitatively the major observations.
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