Abstract
Photoreflectance (PR) spectroscopy experiments are reported on GaAsSb∕InP heterostructures. The GaAsSb PR spectrum is studied as a function of temperature and the transition nature is shown to change from Franz-Keldysh oscillations (FKO) at room temperature to a third derivative functional form (TDFF) line shape at low temperatures. Combining both analysis (FKO and TDFF) in the same sample, we derive internal electric field and phase values of the PR transition, together with accurate values for alloy band gap energy on the whole temperature range. Type II interface recombination is shown to reduce photovoltage effects as a function of temperature. FKO are found to appear for a very weak electric field (8kV∕cm) in the GaAsSb∕InP heterostructure, contrary to usual observations. This point is discussed in relation with the broadening parameter of the transition.
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