Abstract
In this paper, we report photoreflectance investigations of GaInNAs layers almost lattice‐matched to GaAs substrate and annealed at different temperatures. Our investigations done from 10 K to room temperature give evidence that these layers exhibit several distinct band gaps. These distinct band gaps, which were found to co‐exist, are associated with different nitrogen bonding configurations (N‐Ga4−mInm (0⩽ m ⩽4) short‐range‐order clusters). The annealing‐induced blueshift of GaInNAs band gap energy, which is usually observed in this system, is due to the change in the intensity of PR resonances related to different N‐Ga4−mInm configurations.
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