Abstract
In this paper we report a detailed study of photoreflectance (PR) in δ-Si:GaAs superlattices. PR spectra yield three contributions: (1) from intrinsic GaAs; (2) Franz–Keldysh oscillations (FKO) due to the surface electric field, whose value is explained by a simple capacitor model; and (3) FKO attributed to the buffer/superlattice interface. We observed the photovoltaic effect due to the probe beam in the PR arrangement and achieved surface voltage reductions up to 30%. We also present a time-resolved PR technique, which allows us to discriminate these contributions in the time domain and gives us the PR characteristic decay times.
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