Abstract
The effect of resonant acoustic wave excitation in semi-insulating gallium-arsenide single crystals is investigated by means of light pulses. The peak amplitude of excited elastic oscillations is observed in a temperature range, where small values of the internal friction and electrical conductivity of the semiconductor take place simultaneously. The effect is related to the inverse piezoelectric conversion of the bulk-photovoltage energy into the mechanical deformation of the semiconductor crystal. The results of the investigations can be used for designing semiconductor photodetectors with high modulation-frequency selectivity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have