Abstract
Photon-stimulated ion desorption from chlorine-adsorbed GaAs surfaces has been studied by using synchrotron radiation. We found that both Ga + and Cl + ions were desorbed from a (100) surface with about half a monolayer of adsorbed chlorine and that the Ga + -ion yield from a surface with about five monolayers of adsorbed chlorine was decreased drastically. On the other hand, from a (111)B surface with about one monolayer of adsorbed chlorine, only Cl + was desorbed. These differences in the ion species desorbed are discussed in terms of the chlorine bonding states of the outermost surface layer.
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