Abstract
Synchrotron radiation photoemission spectroscopy (SRPES) and scanning photoelectron microscopy (SPEM) have been used to investigate photon-stimulated H desorption from several H-terminated Si(001) surfaces for resistless lithography. H was desorbed from a well-defined Si(001)2×1:H surface upon unmonochromatized photon irradiation, but monochromatic photons (100 ∼ 650 eV) did not break H-Si bonds regardless of the incident photon flux per unit area. Photons of ∼7.9 eV or secondary electrons might induce H desorption upon unmonochromatized photon irradiation. On the other hand, contaminated H/Si(001) surfaces were affected by extreme ultraviolet (EUV) (11.8 nm) irradiation. Here, we demonstrate that minute patterns can be formed through the photochemical reaction.
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