Abstract
We report on an electrically controlled optical modulator using a novel GaAs sawtooth structure. This structure consists of alternating n-type and p-type delta-doped GaAs. Modulation of tunnelling-assisted absorption is achieved by changing the internal electric field which in turn is controlled by external bias. Modulation of light intensity is demonstrated over a broad spectral range of Δλ > 100 nm. A contrast ratio of 1 : 1.7 of the opaque and transparent states is obtained. Low-voltage operation (ΔV < 5V) and potential high-speed capability make the new device an attractive candidate for future photonic switching systems.
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