Abstract
Among layered and 2D semiconductors, there are many with substantial optical anisotropy within individual layers, including group‐IV monochalcogenides MX (M = Ge or Sn and X = S or Se) and black phosphorous (bP). Recent work has suggested that the in‐plane crystal orientation in such materials can be switched (e.g., rotated through 90°) through an ultrafast, displacive (i.e., nondiffusive), nonthermal, and lower‐power mechanism by strong electric fields, due to in‐plane dielectric anisotropy. In theory, this represents a new mechanism for light‐controlling‐light in photonic integrated circuits (PICs). Herein, numerical device modeling is used to study device concepts based on switching the crystal orientation of SnSe and bP in PICs. Ring resonators and 1 × 2 switches with resonant conditions that change with the in‐plane crystal orientations SnSe and bP are simulated. The results are broadly applicable to 2D materials with ferroelectric and ferroelastic crystal structures including SnO, GeS, and GeSe.
Highlights
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Among layered and 2D semiconductors, there are many with substantial optical range of 1–2 eV and are favorable anisotropy within individual layers, including group-IV monochalcogenides MX (M 1⁄4 Ge or Sn and X 1⁄4 S or Se) and black phosphorous
Among layered and 2D materials, there are many with substantial optical anisotropy within individual layers, including the group-IV monochalcogenides MX (M 1⁄4 Ge or Sn and X 1⁄4 S or Se) and black roelectric and ferroelastic crystal structures including SnO, GeS, and GeSe
Summary
SnSe is a layered material, but has relatively high exfoliation energy, and as a result has not been widely studied in monolayer form.[14,15,16] we use the published, theoretically-predicted complex refractive index of monolayer SnSe in our device. The device has a switching contrast of % 50 dB at 2.56 μm; see SI for visualizations of the simulation
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