Abstract
Using a pair of p- and n-type semiconductors separated by a nanoscale vacuum gap, we introduce an optoelectronics element prototype, "photonic p-n junction", as an analogue of the electronic p-n junction, which is demonstrated to serve as an ideal near-field heat flux modulator. The high modulation performance relies on the switch among three fundamental photon-carrier interaction modes (i.e., surface plasmon polaritons, symmetric depleted internal plasmon polaritons and symmetric accumulated surface plasmon polaritons) caused by the changes in hole and electron densities near the surfaces under a tunable bias. This prototype offers new thoughts not only for contactless thermal management at nanoscale but also for design of optoelectronics devices processing information carried by plasmon polaritons.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
