Abstract
Zinc nitride films were prepared by the rf-magnetron sputtering using Zn target in Ar-N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> plasma for 30 min at 300 W and annealed for 1 h in O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> at 300 °C. The XRD measurement indicated that the as-deposited film had polycrystalline structure with five peaks corresponding to the cubic anti-bixbyite Zn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and exhibited preferred orientation (400). The annealing weakened the crystallinity and generated ZnO texture. The AFM images revealed that no significant change was generated in the grain size and surface roughness. Direct band gaps of 1.15 eV and 1.4 eV were obtained for the as-deposited and annealed films respectively. The photoconductivity measurements indicated that the as-deposited film did not have any response whereas the annealed film was photoconductive.
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