Abstract
This paper presents a preliminary guide to realize microcavity semiconductor lasers exhibiting spontaneous emission control effects. It includes: 1) theoretical consideration on the effects; 2) processing techniques for semiconductor microcavities; and 3) some demonstrations of photonic crystal and microdisk cavity. It was shown that, even with a spectral broadening of electron transition, thresholdless lasing operation and alternation of spontaneous emission rate are expected in a cavity satisfying the single mode condition that only one mode is allowed in the transition spectrum. An ideal three-dimensional (3-D) photonic crystal has the potentiality for realizing this condition. In two-dimensional (2-D) crystals and microdisk cavities, thresholdless operation is also expected, but the alternation of spontaneous emission rate may be negligible due to the insufficient optical confinement. In the experiment, some processing techniques for GaInAsP-InP system were investigated and methane-based reactive ion beam etching was selected because of the smooth sidewalls and adaptability to arbitrary structures. A GaInAsP-InP 2-D photonic crystal constructed by submicron columns was fabricated using this method. Owing to the slow surface recombination of this material, a polarized photoluminescence and peculiar transmission spectra were observed at room temperature (RT), which can be explained by a photonic band calculation. However, some technical improvement is necessary for clear demonstration of photonic bandgap, which is minimally required for device applications. In contrast to this, a GaInAsP-InP microdisk cavity of 2 /spl mu/m in diameter, which corresponds to the cavity volume 2.5 times the single-mode condition, has achieved RT lasing with threshold current as low as 0.2 mA. Further reduction of diameter and realization of continuous-wave (CW) operation will provide a significant regime for the observation of spontaneous emission control effects.
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