Abstract
Phase change materials (PCMs), characterized by high optical contrast (Δn>1), nonvolatility (zero static power consumption), and quick phase change speed (∼ns), provide new opportunities for building low-power and highly integrated photonic tunable devices. Optical integrated devices based on PCMs, such as optical switches and optical routers, have demonstrated significant advantages in terms of modulation energy consumption and integration. In this paper, we theoretically verify the solution for a highly integrated nonvolatile optical switch based on the modulation of the topological interface state (TIS) in the quasi-one-dimensional photonic crystal (quasi-1D PC). The TIS exciting wavelength changes with the crystalline level of the PCM. The extinction ratio (ER) of the topological optical switch is over 18 dB with a modulation length of 9 μm. Meanwhile, the insertion loss (IL) can be controlled within 2 dB. Furthermore, we have analyzed the impact of fabrication errors on the device’s performance. The obtained results show that, the topological optical switch, which changes its “on/off” state by modulating TIS, exhibits enhanced robustness to the fabrication process. We provide an interesting and highly integrated scheme for designing the on-chip nonvolatile optical switch. It offers great potential for designing highly integrated on-chip optical switch arrays and nonvolatile optical neural networks.
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