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Abstract
The surface nonflatness induced from the material itself or the production atmosphere can lead to serious non-uniformity consequences in nanoimprint lithography (NIL) which is used for providing a low cost and high throughput nano-fabrication process. In this paper, soft UV NIL (SUNIL) processes are used for photonic crystal (PC) pattern transfer of a GaN-based light-emitting diode (LED) with patterned sapphire substrate (PSS). The results reveal a significant incompatibility between the conventional SUNIL and the nonflat p-GaN surface. Ellipse-shaped rather than circle-shaped PC structure is obtained on the p-GaN surface due the deformation of the soft mold in nonflat NIL. A dry lift-off (DLO) SUNIL is proposed to overcome the non-uniformity issue in nonflat NIL as well as the collapse problem of the free-standing pillar-shaped resist in wet lift-off. The photoluminescence enhancements of the LED fabricated by the DLO SUNIL method compared to those with conventional SUNIL and unpatterned LED are 1.41 fold and 3.48 fold, respectively. Further study shows that the DLO SUNIL is applicable in the fabrication of the PC structure with tunable duty cycle via one single initial PC mold.
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