Abstract

The power consumption of a conventional photoreceiver is dominated by that of the electric amplifier connected to the photodetector (PD). An ultralow-capacitance PD can overcome this limitation, because it can generate sufficiently large voltage without an amplifier when combined with a high-impedance load. In this work, we demonstrate an ultracompact InGaAs PD based on a photonic crystal waveguide with a length of only 1.7 μm and a capacitance of less than 1 fF. Despite the small size of the device, a high responsivity of 1 A/W and a clear 40 Gbit/s eye diagram are observed, overcoming the conventional trade-off between size and responsivity. A resistor-loaded PD was actually fabricated for light-to-voltage conversion, and a kilo-volt/watt efficiency with a gigahertz bandwidth even without amplifiers was measured with an electro-optic probe. Combined experimental and theoretical results reveal that a bandwidth in excess of 10 GHz can be expected, leading to an ultralow energy consumption of less than 1 fJ/bit for the photoreceiver. Amplifier-less PDs with attractive performance levels are therefore feasible and a step toward a densely integrated photonic network/processor on a chip.

Highlights

  • Future microprocessors will need an unprecedented many-core complementary metal oxide semiconductor (CMOS) architecture, and will require dense network management on a chip with a high bit rate and low power consumption that cannot be matched by an electrical interconnect

  • III–V materials and their photonic devices have been the main players as regards highspeed transceivers in telecom/datacom photonic networks, and are still promising candidates for the construction of these chip-com networks that can be integrated with laser sources, photoreceivers, and other functional nanophotonic devices with ultralow-power consumption well beyond that of group-IV materials

  • Photoreceivers generally consist of a photodetector (PD) and a trans-impedance amplifier (TIA) to generate sufficient voltage to drive the subsequent electronic circuits, and they are often fully integrated at the CMOS level for short-range optical interconnection [6,7]

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Summary

INTRODUCTION

Future microprocessors will need an unprecedented many-core complementary metal oxide semiconductor (CMOS) architecture, and will require dense network management on a chip with a high bit rate and low power consumption that cannot be matched by an electrical interconnect. We have already reported PhC-PDs embedded in an InGaAs absorption layer in an InP-based PhC waveguide, which we obtained using an ultracompact buried-heterostructure (BH) formation [9], and with which we demonstrated a detection bandwidth of around 6 GHz [10] Such a BH technique should provide good applicability for nano-PDs, because this structure can confine both photons and carriers in an ultrasmall space that cannot be achieved by any other PDs. In addition, a lateral p-i-n junction and an air-bridge structure are effective for the reduction of junction capacitance. The potential for integration with InP-based active nano-photonic devices such as all-optical switches, memories, and lasers [12,13,14] with recordlow power consumption is very attractive With these features, the combination of PhC waveguides and InGaAs material offer the possibility of realizing a nano-PD with the smallest size and capacitance yet reported, which has great potential for use as a photoreceiver on a chip. These results reveal a successful way of realizing an ultrasmall/ ultralow-energy photoreceiver that can be densely integrated on a chip

REQUIREMENTS FOR RESISTOR-LOADED
DESIGN AND FABRICATION OF PhC InGaAs PD
DC OPTICAL RESPONSES OF PhC-PD
DYNAMIC OPTICAL RESPONSES OF PhC-PD
CONFIGURING A RESISTOR-LOADED PhC-PD
SUMMARY

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