Abstract
Photon trapping photodiode design in HgCdTe mid-wavelength infrared focal plane array detectors is investigated in this work, utilizing the finite-difference time-domain technique. The quantum efficiency and the current–voltage characteristics have been numerically simulated, using Crosslight Technology Computer Aided Design software. Simulation results indicate that dark current is reduced more significantly in the photon trapping photodiode than in the mesa photodiode while maintaining the same quantum efficiency.
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