Abstract
The photon stimulated ion desorption yield of H + ions from a H 2O dosed GaAs (110) surface has been measured in the range 18eV ⩽ hυ ⩽ 30eV. There is a direct correspondence between the PSID H + yield, reflectance, and the secondary electron yield spectrum of GaAs (110). The data provides evidence that the initial stages of PSID involve core level (Ga(3d), O(2s)) → conduction band excitation followed by Auger decay.
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