Abstract
Photon-stimulated desorption (PSD) of CO from Si single crystal is studied carefully by the throughput method. The photodesorption yield of Si single crystal is lower than that of OFHC copper. To investigate the effect of impurities in Si, stable isotope 13C is chosen as an impurity. 13CO is hardly detected in the outgas due to PSD from 13C-implanted, Si single crystal. It is concluded that carbon in Si single crystal is not desorbed in the PSD process.
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