Abstract
AbstractSpatially separated stable charge centers – self‐trapped holes, trapped electrons, dopant ionic centers and radicals were generated in an Ar matrix doped with Xe and N2 by a low energy electron beam. A combination of the cathodoluminescence (CL) with the photon‐stimulated luminescence (PSL) and photon‐stimulated exoelectron emission (PSEE) methods was used to monitor center formation and selected relaxation channels – charge recombination reactions and exoelectron emission. PSEE from pre‐irradiated Ar samples was registered simultaneously with N line emission. Vacuum ultraviolet (VUV) intrinsic and extrinsic recombination luminescence from pre‐irradiated samples has been detected to confirm the suggested relaxation path of the stored energy. An afterglow of the N line can be considered as an internal source of photons which releases electrons from the traps and being a triggering mechanism of relaxation processes: (i) – exoelectron emission, (ii) – radiative recombination of charge species. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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