Abstract
The photon loss in the active and passive regions of an electron-beam-pumped GaAs laser has been measured by masking a portion of the length between Fabry-Perot surfaces. A theoretical expression for threshold has been developed, and experimental measurement of threshold current density as a function of masked length has been made for several different n and p-doped samples of GaAs at 4°K. The loss coefficients have been found to be strongly dependent on impurity doping concentration. The loss coefficient in the active region has been observed to be less than the loss coefficient in passive material. This is attributed to an inhibiting of interband absorptive transitions by the inverted population in the active region.
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