Abstract
Two-dimensional (2-D) photon-energy distributions emitted from hot-carriers in LOCOS and trench-isolated CMOS devices with a narrow channel width of about 10 μm are measured. The 2-D photoemission images show different characteristics depending on the photon energy. Relatively large spatial fluctuations of normalized photoemission-intensity profiles for each photon energy are observed, while all the profiles show similar trapezoidal shapes along the channel width direction. Average electron temperatures are about 3700 and 3500 K for n- and p-MOSFETs, respectively, independently of the isolation technologies. Quite characteristic photoemission profiles and 2-D images are observed in trench-isolated n-MOSFETs after high bias-voltage stress.
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