Abstract
The photon emission phenomenon has been studied in deep submicron MOSFETs (down to 0.1 µm) in a wide drain and substrate voltage range. The authors show that the number of emitted photon is still large for low voltage operation. Moreover, using the influence of a substrate bias, it is shown that the photon emission phenomenon is unambiguously associated with the substrate current and cannot be correlated to the gate current.
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