Abstract
Low-intensity photon emissions from a metal-oxide-semiconductor (MOS) capacitor biased with a fast-ramp voltage have been measured with a gated photon counting technique. The number of photons detected in depletion, avalanche, electron emission, and accumulation regimes of one ramp cycle shows characteristic time dependence that manifests novel aspects of the many-electron dynamics in an MOS surface potential well. This optical signature provides direct evidence for hot-electron relaxation via intersubband transitions and electron-hole recombinations at the interface trap sites.
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