Abstract
We have observed IR detection signals with ns response in irradiated Bi thin films, which were evaporated at large angles with the substrate normal direction. At 10 μm radiation, these detectors show a voltage response with reversed sign compared to the visible-light response which is generated by a well-known thermoelectric effect. Other thin-film metallic detectors as Cr films operating with this effect do not show this sign inversion at 10 μm. We attribute the sign-reversed fast signal in bismuth to a transversal photon drag effect related to the interband transition induced by the 10 μm radiation.
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