Abstract
The authors have investigated the influence of far infrared radiation on the tunnel current of GaAs/(GaAl)As double-barrier resonant tunnelling devices. From the analysis of the far infrared radiation response, as a function of bias voltage, for different radiation energies, an upper limit for the scattering time in the well is determined. The scattering time is found to be shorter than the tunnelling time, which indicates that tunnelling is mainly sequential in the samples studied.
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