Abstract
The dependence of photon absorption by a low-dimensional cadmium-sulfide/cadmium-telluride (CdS/CdTe) heterostructured absorber on the thickness and number of CdTe active layers is investigated. The equation for the photon absorption coefficient (α) used is based on the partial momentum k -selection approach. Theoretical results show that absorption greater than 4×10 4 cm −1 is obtained when the thickness of the active layer reaches 50 A. Similarly, with each additional CdTe active layer in the heterostructured absorber, a relative increase of 0.5×10 4 cm −1 in photon absorption is achieved. The relation between photoelectric quantum efficiency and photon absorption is determined by the number and thickness of the CdTe active layers in the heterostructured absorber. A quantum efficiency greater than 0.9 is obtained using 15 active layers with a thickness of 50 A.
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