Abstract
The photocurrent multiplication observed under the irradiation of bulk-absorbed red light in amorphous silicon carbide (a-SiC:H) films with a simple configuration SnO2/a-SiC:H/Au cell was found to be photomodulated depressively by superimposing surface-absorbed ultraviolet(UV)-blue light on the red light irradiation. This phenomenon was reasonably interpreted based on the previously proposed multiplication mechanism involving the tunneling injection of electrons from an SnO2 electrode to the a-SiC:H film through a thin SiOx insulating layer in a high electric field issued from the accumulation of trapped holes near SnO2/a-SiC:H interface, which was effectively suppressed by the UV-blue light irradiation.
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