Abstract

Two-dimensional (2D) transition metal dichalcogenide semiconductors have garnered significant attention due to their extraordinary electrical and optical properties. It has been increasingly important to develop strategies for modulating their properties. A number of methods have been introduced, including doping, electric and magnetic fields, mechanical strain, etc. Herein, we report a novel approach of using photochromic molecules to modulate optoelectronic properties of monolayer MoSe2 with light. We have synthesized photochromic diarylethene (DAE) molecules that can switch between two isomeric forms, referred to as open and closed, under UV and visible light, respectively. The DAE molecules formed a uniform layer with a thickness of approximately 2 nm on monolayer MoSe2. Our density functional theory (DFT) calculations suggest that the TMD and DAE will align their band energy levels such that UV irradiation moves the lowest unoccupied molecular orbital (LUMO) energy of DAE in between the conduction band minimum (CBM) and valence band minimum (VBM) of MoSe2. This will facilitate photoexcited electron transfer from MoSe2 to DAE LUMO. Experimentally, we have confirmed our predictions by observing a strong quenching of photoluminescence (PL) and an increase of electrical conductivity in MoSe2. In contrast, visible light induced isomerization to the open form of DAE and expanded its energy levels, moving the LUMO level above the MoSe2 CBM. Therefore, the PL was retained and there was no significant change in electrical conductivity. We showed that this photoswitching can dynamically modulate the optoelectronic properties by demonstrating multiple cycles of PL emission and quenching, by alternating UV and visible light repeatedly. Lastly, our Kelvin probe force microscopy (KPFM) revealed that the potential of MoSe2 monolayers can also be modulated with photochromic molecules and external light irradiation. Our work elucidates photo-processes and exciton mechanisms at the hybrid interfaces and lays the foundation for novel applications including new phototransistors and other 2D optoelectronic devices.

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