Abstract
A method for measuring photoreflectance (PR) by using a Fourier transform infrared (FTIR) spectrometer has been implemented. Features of application of the phase-correction method necessary for storing information on the sign of the spectrum were revealed. The method was applied for measuring the energy spectrum of charge carriers in InxGa1 − xAs/GaAs single quantum wells in the near-infrared range. A good agreement with the results obtained by means of a diffraction spectrometer for the same samples in the same wavelength range is observed. Application of the developed photomodulation FTIR spectroscopy method for measuring photoreflectance in InSb epitaxial layers in the wavelength range of 2–10 μm has been demonstrated.
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