Abstract
Photomagnetoelectric (PME) effect of high resistivity CdTe and CdZnTe for nuclear detector applications is measured. Ambipolar diffusion lengths of 9 μm and 25 μm for CdTe and CdZnTe respectively are obtained at room temperature. From the temperature dependence of PME short circuit current measurements, a peak at T = 240 K is found for THM CdTe when the excitation light is chopped at the frequency of 135 Hz. The behaviour is explained by the reemission of trapped carrier at the recombination centre by optical excitation. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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