Abstract
The influence of quantum-size layers (InAs quantum dots, In0.2Ga0.8As quantum wells, and combined quantum-well/quantum-dot layers) and heteroepitaxial passivation of surface by an In0.5Ga0.5P layer on the photomagnetic effect in epitaxial n-GaAs layers has been investigated.
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Schedule a callMore From: Bulletin of The Russian Academy of Sciences: Physics
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