Abstract
The 77 K photoluminescence of electron-irradiated (E = 2.2 MeV, Φ = 1016 electrons/cm2) and annealed (T ≦ 650 °C) copper-doped n-type GaAs crystals is studied. A non-trivial increase in the intensities of copper-induced extrinsic emission bands peaked at hv (77 K) near 1.0 and 1.28 eV is found. An analysis of the results obtained shows that the radiation and annealing induced changes in the concentrations of copper-induced 1.0 and 1.28 eV radiative centres (CuGaVAs and CuGaTeAs pairs), resulting from a high-temperature interaction of interstitial copper atoms with radiation-induced defects (gallium vacancies), could well account for the effects observed. [Russian Text Ignored].
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