Abstract

We demonstrate the synthesis of β-Ga2O3:Eu3+ red-emitting films by metal–organic deposition and report the photoluminescence (PL) properties of such films measured from 20 to 450 K. β-Ga2O3 is one of five well-known modifications of gallium oxide. The X-ray diffraction analysis indicates that only β-phase Ga2O3 can be synthesized by calcination at Tc≥800 °C. An activation energy of ∼0.65 eV for the Eu3+ ions in β-Ga2O3 is determined from a plot of Eu3+-related red emission intensity vs calcination temperature. Lattice temperature dependences of the PL spectrum and luminescence decay time were performed at T = 20–450 and 20–300 K, respectively. No strong temperature dependences of the red emission intensity and decay time were observed below 300 K; however, the PL intensity at T > 300 K exhibited a gradual decrease with increasing T, yielding a quenching energy of ∼0.5 eV. The films calcined at Tc≥900 °C revealed a deep-red emission band peaking at ∼1.7 eV, together with two sharp red emission peaks at ∼1.78 and ∼1.80 eV. These emission band and peaks were attributed to the Cr3+ ions unintentionally doped in β-Ga2O3.

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