Abstract
Undoped diamond like thin films have been prepared by using Direct Current - Plasma Enhanced Chemical Vapour Deposition system. A potentially diamond thin films was fabricated in the presence of gas mixture which accordance to the ratio CH4(1%) + H2(39%) + Ar (60%). The substrate temperature was controlled and adjusted from 300 °C to 500 °C in a vacuum chamber with the optimum pressure of 4 X 10-1Torr. The films were characterized by X ray diffraction microscopy (XRD), Photoluminescene spectroscopy (PL) and Fourier Transform Infrared (FTIR) spectroscopy. It shows that, XRD pattern shown that the film was formed in the amorphous phase with a high fraction of sp3hybridization. Luminescene band shows the peak position at (3.16 eV and 2.94 eV), (3.16 eV and 2.95 eV), (3.17 eV and 2.93 eV) and (3.26 eV) for the films deposited at 300, 350, 400 and 500 °C, respectively. The structural configuration of film obtained which corresponding to the sp3hybridization of C H bonding gives a most significant result at approximately 760 cm-1region was presented.
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