Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer

Abstract

Multilayered InAs/GaAs quantum dot (QD) heterostructures are produced by metal-organic gas phase epitaxy. The structures exhibit photoluminescence around 1.55 {mu}m at 300 K. The specific feature of the technology is the growth of an InAs layer with an increased effective thickness d{sub eff} to form QDs, in combination with low-temperature overgrowth of the QDs with a thin (6-nm) GaAs layer and with the annelaing of defects. By X-ray diffraction analysis and PL studies, it is shown that, in a structure with the increased thickness d{sub eff}, a secondary wetting InGaAs layer is produced on top of the QD layer from the growing relaxed large-sized InAs clusters on annealing. A new mechanism of formation of large-sized QDs characterized by a large 'aspect ratio' is suggested. The mechanism involves the 2D-3D transformation of the secondary InGaAs layer in the field of elastic strains in previously formed QDs. The specific feature of the array of QDs is the coexistence of three populations of different-sized QDs responsible for the multimode photoluminescence in the range from 1 to 1.6 {mu}m. The potentialities of such structures for infrared photoelectric detectors operating in the range from 1-2.5 {mu}m at room temperature are analyzed.