Abstract
The rapid annealing behavior of several kinds of defects in semi-insulating GaAs irradiated with various neutron fluences has been characterized using a photoluminescence technique. In this experiment, transmutation impurities form not only donors, but also acceptors, GeAs (the 1.4783 eV peak). The intensity ratio of the 1.4783 eV peak (GeAs) to the 1.4917 eV peak (CAs) increases with the neutron dose. This finding is consistent with the expected increase of GeAs produced by transmutation. We also see that short time heat treatment leads to the increase of antisite defects GaAs and of complex centers IGa-VAs after neutron irradiation. Based on analysis of the rapid annealing process in comparison with the regular annealing process, it is concluded that the two kinds of defects GaAs and IGa-VAs are the products of defect reactions during the annealing process.
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