Abstract
ABSTRACTWe report the photoluminescence characteristics of fresh dislocations introduced by the plastic deformation in GaN bulk crystals. GaN crystals prepared from free standing wafers grown by the HVPE technique were compressed plastically at 900 to 1000°C. In the deformed crystals (a/3) (1120) dislocations on the (1110) prismatic plane, corresponding to the so-called threading dislocations, were observed in TEM. In the PL studies at 11K the intensity of the near band-edge luminescence decreased drastically in the deformed GaN by about 1/12 than that of the as-grown GaN, which seems to imply the introduction of a high density of non-radiative reco!m bination centers into GaN! during the plastic deformation. By the plastic deformation the yellow band luminescence decreased remarkably meanwhile the red band and other new luminescence developed relatively. It is found that dislocations do not originate to the yellow luminescence but the red luminescence.
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