Abstract
We report a low temperature photoluminescence study on two identical Al 0.13 Ga 0.87 N/GaN single quantum wells (QWs), which are pseudomorphically grown on either a GaN or an AlGaN buffer layer. The red shift of the QW emission due to the quantum confined Stark effect, is found to be strongest in the QW deposited on AlGaN, in contrast to what is to be expected form the estimated built-in electric fields due to spontaneous and piezoelectric polarization fields. Screening of the built-in electric field by a relatively high sheet charge is one of the possible reasons for the observed discrepancy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
